AMD Xilinx
XC17S50XLPD8I
XC17S50XLPD8I ECAD Model
XC17S50XLPD8I Attributes
| Type | Description | Select |
|---|---|---|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Memory Density | 559.232 kbit | |
| Memory Width | 1 | |
| Organization | 559232X1 | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Power Supplies | 3.3 V | |
| Clock Frequency-Max (fCLK) | 10 MHz | |
| Memory IC Type | MEMORY CIRCUIT | |
| I/O Type | COMMON | |
| Number of Functions | 1 | |
| Number of Words Code | 559232 | |
| Number of Words | 559.232 k | |
| Operating Mode | SYNCHRONOUS | |
| Output Characteristics | 3-STATE | |
| Standby Current-Max | 50 µA | |
| Supply Current-Max | 5 µA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| JESD-30 Code | R-PDIP-T8 | |
| Qualification Status | Not Qualified | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Peak Reflow Temperature (Cel) | 225 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Number of Terminals | 8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIP | |
| Package Equivalence Code | DIP8,.3 | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Pitch | 2.54 mm | |
| Terminal Position | DUAL | |
| Seated Height-Max | 4.5974 mm | |
| Length | 9.3599 mm | |
| Width | 7.62 mm | |
| Ihs Manufacturer | XILINX INC | |
| Part Package Code | DIP | |
| Package Description | DIP, DIP8,.3 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.71 |
XC17S50XLPD8I Datasheet Download
XC17S50XLPD8I Overview
The XC17S50XLPD8I chip model is a high-performance, low-power FPGA device from Xilinx, Inc. It is ideal for digital signal processing, embedded processing, image processing, and other applications. This model supports the use of hardware description language (HDL) to create hardware designs that can be deployed in the target system.
The XC17S50XLPD8I chip model has a wide range of features that make it an ideal choice for many applications. It has a total of 17K logic cells and 50Kbits of embedded block RAM. It also has a total of 8 Multiplier/Accumulators (MACs) and 8 DSP slices. The device also has a wide range of I/O options, with support for high-speed LVDS, PCI Express, and USB. Additionally, the device supports various clock domains and supports up to 32 user-configurable I/O standards.
When it comes to the design of the XC17S50XLPD8I chip model, it requires the use of HDL language. This language enables users to create hardware designs that can be deployed in the target system. It also allows users to customize the design to their specific needs. Additionally, the language provides a high degree of flexibility, allowing users to optimize their design for maximum performance and power efficiency.
As for the application of the XC17S50XLPD8I chip model, it is suitable for a wide range of applications such as high-performance digital signal processing, embedded processing, image processing, and more. It is also suitable for the development and popularization of future intelligent robots. To use the model effectively, it requires technical talents such as knowledge in HDL language, the ability to design hardware, and the ability to optimize designs for performance and power efficiency.
In conclusion, the XC17S50XLPD8I chip model is a great choice for many applications. It has a wide range of features and supports the use of HDL language. It is suitable for high-performance digital signal processing, embedded processing, image processing, and more. It is also suitable for the development and popularization of future intelligent robots. To use the model effectively, it requires technical talents such as knowledge in HDL language, the ability to design hardware, and the ability to optimize designs for performance and power efficiency.
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|---|---|---|
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