
Toshiba Semiconductor and Storage
XPN9R614MC,L1XHQ
XPN9R614MC,L1XHQ ECAD Model
XPN9R614MC,L1XHQ Attributes
Type | Description | Select |
---|---|---|
Series | U-MOSVI | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 40 V | |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 500µA | |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
Vgs (Max) | +10V, -20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 840mW (Ta), 100W (Tc) | |
Operating Temperature | 175°C | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance-WF (3.1x3.1) | |
Package / Case | 8-PowerVDFN |
XPN9R614MC,L1XHQ Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the XPN9R614MC,L1XHQ. This component can be purchased from FMALL, a reputable supplier of electronic components.
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21,130 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $0.3700 | $0.3700 |
10+ | $0.3660 | $3.6598 |
100+ | $0.3461 | $34.6086 |
1000+ | $0.3262 | $163.0980 |
10000+ | $0.2984 | $298.3500 |
The price is for reference only, please refer to the actual quotation! |