TW107Z65C,S1F
TW107Z65C,S1F
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Toshiba Semiconductor and Storage

TW107Z65C,S1F


TW107Z65C,S1F
F10256-TW107Z65C,S1F
Active
G3 650V SIC-MOSFET TO-247-4L 10
TO-247-4

TW107Z65C,S1F ECAD Model


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TW107Z65C,S1F Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 152mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
FET Feature -
Power Dissipation (Max) 76W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L(X)
Package / Case TO-247-4

TW107Z65C,S1F Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TW107Z65C,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the TW107Z65C,S1F to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

15,000 In Stock


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Unit Price: $12.3725
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $11.5064 $11.5064
10+ $11.3827 $113.8270
100+ $10.7641 $1,076.4075
1000+ $10.1455 $5,072.7250
10000+ $9.2794 $9,279.3750
The price is for reference only, please refer to the actual quotation!

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