TPN8R903NL,LQ
TPN8R903NL,LQ
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
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Toshiba Semiconductor and Storage

TPN8R903NL,LQ


TPN8R903NL,LQ
F10256-TPN8R903NL,LQ
Active
MOSFET N-CH 30V 20A 8TSON
8-PowerVDFN

TPN8R903NL,LQ ECAD Model


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TPN8R903NL,LQ Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 15 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 22W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN

TPN8R903NL,LQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPN8R903NL,LQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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38,270 In Stock


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Unit Price: $0.6199
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.5765 $0.5765
10+ $0.5703 $5.7031
100+ $0.5393 $53.9313
1000+ $0.5083 $254.1590
10000+ $0.4649 $464.9250
The price is for reference only, please refer to the actual quotation!

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