TPN7R006PL,L1Q
TPN7R006PL,L1Q
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Toshiba Semiconductor and Storage

TPN7R006PL,L1Q


TPN7R006PL,L1Q
F10256-TPN7R006PL,L1Q
Active
MOSFET N-CH 60V 54A 8TSON
8-PowerVDFN

TPN7R006PL,L1Q ECAD Model


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TPN7R006PL,L1Q Attributes


Type Description Select
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1875 pF @ 30 V
FET Feature -
Power Dissipation (Max) 630mW (Ta), 75W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN

TPN7R006PL,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPN7R006PL,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

28,800 In Stock


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Unit Price: $0.8578
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.7978 $0.7978
10+ $0.7892 $7.8918
100+ $0.7463 $74.6286
1000+ $0.7034 $351.6980
10000+ $0.6434 $643.3500
The price is for reference only, please refer to the actual quotation!

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