Toshiba Semiconductor and Storage
TPN4R712MD,L1Q
TPN4R712MD,L1Q ECAD Model
TPN4R712MD,L1Q Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVI | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 42W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
| Package / Case | 8-PowerVDFN |
TPN4R712MD,L1Q Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPN4R712MD,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the TPN4R712MD,L1Q provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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37,520 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $0.6623 | $0.6623 |
| 10+ | $0.6552 | $6.5522 |
| 100+ | $0.6196 | $61.9614 |
| 1000+ | $0.5840 | $292.0020 |
| 10000+ | $0.5342 | $534.1500 |
| The price is for reference only, please refer to the actual quotation! | ||