TPN4R303NL,L1Q
TPN4R303NL,L1Q
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Toshiba Semiconductor and Storage

TPN4R303NL,L1Q


TPN4R303NL,L1Q
F10256-TPN4R303NL,L1Q
Active
MOSFET N-CH 30V 40A 8TSON
8-PowerVDFN

TPN4R303NL,L1Q ECAD Model


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TPN4R303NL,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 34W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN

TPN4R303NL,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPN4R303NL,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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46,460 In Stock


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Unit Price: $1.7172
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.5970 $1.5970
10+ $1.5798 $15.7982
100+ $1.4940 $149.3964
1000+ $1.4081 $704.0520
10000+ $1.2879 $1,287.9000
The price is for reference only, please refer to the actual quotation!

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