Toshiba Semiconductor and Storage
TPN3300ANH,LQ
TPN3300ANH,LQ ECAD Model
TPN3300ANH,LQ Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta), 27W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-PowerVDFN |
TPN3300ANH,LQ Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPN3300ANH,LQ. This component can be purchased from FMALL, a reputable supplier of electronic components.
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