TPN13008NH,L1Q
TPN13008NH,L1Q
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Toshiba Semiconductor and Storage

TPN13008NH,L1Q


TPN13008NH,L1Q
F10256-TPN13008NH,L1Q
Active
MOSFET N-CH 80V 18A 8TSON
8-PowerVDFN

TPN13008NH,L1Q ECAD Model


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TPN13008NH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13.3mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 40 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 42W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN

TPN13008NH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPN13008NH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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13,640 In Stock


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Unit Price: $0.3003
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.2793 $0.2793
10+ $0.2763 $2.7628
100+ $0.2613 $26.1261
1000+ $0.2462 $123.1230
10000+ $0.2252 $225.2250
The price is for reference only, please refer to the actual quotation!

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