TPH8R80ANH,L1Q
TPH8R80ANH,L1Q
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Toshiba Semiconductor and Storage

TPH8R80ANH,L1Q


TPH8R80ANH,L1Q
F10256-TPH8R80ANH,L1Q
Active
MOSFET N CH 100V 32A 8-SOP
8-PowerVDFN

TPH8R80ANH,L1Q ECAD Model


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TPH8R80ANH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 61W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH8R80ANH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH8R80ANH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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49,480 In Stock


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Unit Price: $1.8928
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.7603 $1.7603
10+ $1.7414 $17.4138
100+ $1.6467 $164.6736
1000+ $1.5521 $776.0480
10000+ $1.4196 $1,419.6000
The price is for reference only, please refer to the actual quotation!

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