TPH5900CNH,L1Q
TPH5900CNH,L1Q
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Toshiba Semiconductor and Storage

TPH5900CNH,L1Q


TPH5900CNH,L1Q
F10256-TPH5900CNH,L1Q
Active
MOSFET N-CH 150V 9A 8SOP
8-PowerVDFN

TPH5900CNH,L1Q ECAD Model


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TPH5900CNH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 75 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH5900CNH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH5900CNH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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10,220 In Stock


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Unit Price: $2.5195
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.3431 $2.3431
10+ $2.3179 $23.1794
100+ $2.1920 $219.1965
1000+ $2.0660 $1,032.9950
10000+ $1.8896 $1,889.6250
The price is for reference only, please refer to the actual quotation!

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