TPH2R608NH,L1Q
TPH2R608NH,L1Q
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Toshiba Semiconductor and Storage

TPH2R608NH,L1Q


TPH2R608NH,L1Q
F10256-TPH2R608NH,L1Q
Active
MOSFET N-CH 75V 150A 8SOP
8-PowerVDFN

TPH2R608NH,L1Q ECAD Model


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TPH2R608NH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 37.5 V
FET Feature -
Power Dissipation (Max) 142W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH2R608NH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH2R608NH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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16,070 In Stock


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Unit Price: $1.302
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.2109 $1.2109
10+ $1.1978 $11.9784
100+ $1.1327 $113.2740
1000+ $1.0676 $533.8200
10000+ $0.9765 $976.5000
The price is for reference only, please refer to the actual quotation!

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