TPH2900ENH,L1Q
TPH2900ENH,L1Q
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Toshiba Semiconductor and Storage

TPH2900ENH,L1Q


TPH2900ENH,L1Q
F10256-TPH2900ENH,L1Q
Active
MOSFET N-CH 200V 33A 8SOP
8-PowerVDFN

TPH2900ENH,L1Q ECAD Model


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TPH2900ENH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH2900ENH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH2900ENH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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30,800 In Stock


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Unit Price: $2.8549
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.6551 $2.6551
10+ $2.6265 $26.2651
100+ $2.4838 $248.3763
1000+ $2.3410 $1,170.5090
10000+ $2.1412 $2,141.1750
The price is for reference only, please refer to the actual quotation!

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