
Toshiba Semiconductor and Storage
TPH2900ENH,L1Q
TPH2900ENH,L1Q ECAD Model
TPH2900ENH,L1Q Attributes
Type | Description | Select |
---|---|---|
Series | U-MOSVIII-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 200 V | |
Current - Continuous Drain (Id) @ 25°C | 33A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 78W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SOP Advance (5x5) | |
Package / Case | 8-PowerVDFN |
TPH2900ENH,L1Q Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH2900ENH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.
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30,800 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $2.6551 | $2.6551 |
10+ | $2.6265 | $26.2651 |
100+ | $2.4838 | $248.3763 |
1000+ | $2.3410 | $1,170.5090 |
10000+ | $2.1412 | $2,141.1750 |
The price is for reference only, please refer to the actual quotation! |