TPH1R712MD,L1Q
TPH1R712MD,L1Q
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Toshiba Semiconductor and Storage

TPH1R712MD,L1Q


TPH1R712MD,L1Q
F10256-TPH1R712MD,L1Q
Active
MOSFET P-CH 20V 60A 8SOP
8-PowerVDFN

TPH1R712MD,L1Q ECAD Model


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TPH1R712MD,L1Q Attributes


Type Description Select
Series U-MOSVI
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 182 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH1R712MD,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH1R712MD,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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1,080 In Stock


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Unit Price: $1.0538
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.9800 $0.9800
10+ $0.9695 $9.6950
100+ $0.9168 $91.6806
1000+ $0.8641 $432.0580
10000+ $0.7904 $790.3500
The price is for reference only, please refer to the actual quotation!

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