TPH1R306PL,L1Q
TPH1R306PL,L1Q
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Toshiba Semiconductor and Storage

TPH1R306PL,L1Q


TPH1R306PL,L1Q
F10256-TPH1R306PL,L1Q
Active
MOSFET N-CH 60V 100A 8SOP
8-PowerVDFN

TPH1R306PL,L1Q ECAD Model


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TPH1R306PL,L1Q Attributes


Type Description Select
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.34mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN

TPH1R306PL,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPH1R306PL,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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8,380 In Stock


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Unit Price: $1.5093
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.4036 $1.4036
10+ $1.3886 $13.8856
100+ $1.3131 $131.3091
1000+ $1.2376 $618.8130
10000+ $1.1320 $1,131.9750
The price is for reference only, please refer to the actual quotation!

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