Toshiba Semiconductor and Storage
TPC8110(TE12L,Q,M)
TPC8110(TE12L,Q,M) ECAD Model
TPC8110(TE12L,Q,M) Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSIII | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOP (5.5x6.0) | |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
TPC8110(TE12L,Q,M) Datasheet Download
TPC8110(TE12L,Q,M) Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPC8110(TE12L,Q,M). This component can be purchased from FMALL, a reputable supplier of electronic components.
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38,490 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| No reference price found. | ||