TK8R2E06PL,S1X
TK8R2E06PL,S1X
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Toshiba Semiconductor and Storage

TK8R2E06PL,S1X


TK8R2E06PL,S1X
F10256-TK8R2E06PL,S1X
Active
PB-F POWER MOSFET TRANSISTOR TO-
TO-220-3

TK8R2E06PL,S1X ECAD Model


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TK8R2E06PL,S1X Attributes


Type Description Select
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 30 V
FET Feature -
Power Dissipation (Max) 81W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK8R2E06PL,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK8R2E06PL,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the TK8R2E06PL,S1X to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

15,320 In Stock


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Unit Price: $0.87
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.8091 $0.8091
10+ $0.8004 $8.0040
100+ $0.7569 $75.6900
1000+ $0.7134 $356.7000
10000+ $0.6525 $652.5000
The price is for reference only, please refer to the actual quotation!

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