TK7E80W,S1X
TK7E80W,S1X
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Toshiba Semiconductor and Storage

TK7E80W,S1X


TK7E80W,S1X
F10256-TK7E80W,S1X
Active
MOSFET N-CH 800V 6.5A TO220
TO-220-3

TK7E80W,S1X ECAD Model


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TK7E80W,S1X Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK7E80W,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK7E80W,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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18,310 In Stock


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Unit Price: $3.3855
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.1485 $3.1485
10+ $3.1147 $31.1466
100+ $2.9454 $294.5385
1000+ $2.7761 $1,388.0550
10000+ $2.5391 $2,539.1250
The price is for reference only, please refer to the actual quotation!

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