TK55S10N1,LQ
TK55S10N1,LQ
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
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Toshiba Semiconductor and Storage

TK55S10N1,LQ


TK55S10N1,LQ
F10256-TK55S10N1,LQ
Active
MOSFET N-CH 100V 55A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63

TK55S10N1,LQ ECAD Model


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TK55S10N1,LQ Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 10 V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

TK55S10N1,LQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK55S10N1,LQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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43,840 In Stock


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Unit Price: $1.4092
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.3106 $1.3106
10+ $1.2965 $12.9646
100+ $1.2260 $122.6004
1000+ $1.1555 $577.7720
10000+ $1.0569 $1,056.9000
The price is for reference only, please refer to the actual quotation!

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