TK40E06N1,S1X
TK40E06N1,S1X
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Toshiba Semiconductor and Storage

TK40E06N1,S1X


TK40E06N1,S1X
F10256-TK40E06N1,S1X
Active
MOSFET N-CH 60V 40A TO220
TO-220-3

TK40E06N1,S1X ECAD Model


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TK40E06N1,S1X Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 30 V
FET Feature -
Power Dissipation (Max) 67W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK40E06N1,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK40E06N1,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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12,790 In Stock


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Unit Price: $1.1367
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.0571 $1.0571
10+ $1.0458 $10.4576
100+ $0.9889 $98.8929
1000+ $0.9321 $466.0470
10000+ $0.8525 $852.5250
The price is for reference only, please refer to the actual quotation!

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