TK3R3E08QM,S1X
TK3R3E08QM,S1X
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Toshiba Semiconductor and Storage

TK3R3E08QM,S1X


TK3R3E08QM,S1X
F10256-TK3R3E08QM,S1X
Active
UMOS10 TO-220AB 80V 3.3MOHM
TO-220-3

TK3R3E08QM,S1X ECAD Model


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TK3R3E08QM,S1X Attributes


Type Description Select
Series U-MOSX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK3R3E08QM,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK3R3E08QM,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the TK3R3E08QM,S1X to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

43,570 In Stock


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Unit Price: $2.8704
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.6695 $2.6695
10+ $2.6408 $26.4077
100+ $2.4972 $249.7248
1000+ $2.3537 $1,176.8640
10000+ $2.1528 $2,152.8000
The price is for reference only, please refer to the actual quotation!

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