Toshiba Semiconductor and Storage
TK3P80E,RQ
TK3P80E,RQ ECAD Model
TK3P80E,RQ Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 300µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 80W (Tc) | |
| Operating Temperature | 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
TK3P80E,RQ Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK3P80E,RQ. This component can be purchased from FMALL, a reputable supplier of electronic components.
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