TK31E60W,S1VX
TK31E60W,S1VX
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Toshiba Semiconductor and Storage

TK31E60W,S1VX


TK31E60W,S1VX
F10256-TK31E60W,S1VX
Active
MOSFET N-CH 600V 30.8A TO220
TO-220-3

TK31E60W,S1VX ECAD Model


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TK31E60W,S1VX Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK31E60W,S1VX Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK31E60W,S1VX. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

20,320 In Stock


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Unit Price: $11.1231
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $10.3445 $10.3445
10+ $10.2333 $102.3325
100+ $9.6771 $967.7097
1000+ $9.1209 $4,560.4710
10000+ $8.3423 $8,342.3250
The price is for reference only, please refer to the actual quotation!

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