TK2R9E10PL,S1X
TK2R9E10PL,S1X
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Toshiba Semiconductor and Storage

TK2R9E10PL,S1X


TK2R9E10PL,S1X
F10256-TK2R9E10PL,S1X
Active
PB-F POWER MOSFET TRANSISTOR TO-
TO-220-3

TK2R9E10PL,S1X ECAD Model


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TK2R9E10PL,S1X Attributes


Type Description Select
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 50 V
FET Feature -
Power Dissipation (Max) 306W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK2R9E10PL,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK2R9E10PL,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the TK2R9E10PL,S1X to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

41,350 In Stock


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Unit Price: $7.707
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $7.1675 $7.1675
10+ $7.0904 $70.9044
100+ $6.7051 $670.5090
1000+ $6.3197 $3,159.8700
10000+ $5.7803 $5,780.2500
The price is for reference only, please refer to the actual quotation!

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