TK28E65W,S1X
TK28E65W,S1X
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Toshiba Semiconductor and Storage

TK28E65W,S1X


TK28E65W,S1X
F10256-TK28E65W,S1X
Active
PB-F POWER MOSFET TRANSISTOR TO-
TO-220-3

TK28E65W,S1X ECAD Model


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TK28E65W,S1X Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK28E65W,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK28E65W,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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28,620 In Stock


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Unit Price: $7.2017
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $6.6976 $6.6976
10+ $6.6256 $66.2556
100+ $6.2655 $626.5479
1000+ $5.9054 $2,952.6970
10000+ $5.4013 $5,401.2750
The price is for reference only, please refer to the actual quotation!

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