Toshiba Semiconductor and Storage
TK22E10N1,S1X
TK22E10N1,S1X ECAD Model
TK22E10N1,S1X Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 300µA | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 72W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220 | |
| Package / Case | TO-220-3 |
TK22E10N1,S1X Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK22E10N1,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the TK22E10N1,S1X provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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40,590 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $1.5124 | $1.5124 |
| 10+ | $1.4961 | $14.9610 |
| 100+ | $1.4148 | $141.4794 |
| 1000+ | $1.3335 | $666.7420 |
| 10000+ | $1.2197 | $1,219.6500 |
| The price is for reference only, please refer to the actual quotation! | ||