TK190E65Z,S1X
TK190E65Z,S1X
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Toshiba Semiconductor and Storage

TK190E65Z,S1X


TK190E65Z,S1X
F10256-TK190E65Z,S1X
Active
650V DTMOS VI TO-220 190MOHM
TO-220-3

TK190E65Z,S1X ECAD Model


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TK190E65Z,S1X Attributes


Type Description Select
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 300 V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK190E65Z,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK190E65Z,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the TK190E65Z,S1X to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

29,620 In Stock


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Unit Price: $3.7828
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.5180 $3.5180
10+ $3.4802 $34.8018
100+ $3.2910 $329.1036
1000+ $3.1019 $1,550.9480
10000+ $2.8371 $2,837.1000
The price is for reference only, please refer to the actual quotation!

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