TK17E65W,S1X
TK17E65W,S1X
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Toshiba Semiconductor and Storage

TK17E65W,S1X


TK17E65W,S1X
F10256-TK17E65W,S1X
Active
MOSFET N-CH 650V 17.3A TO220
TO-220-3

TK17E65W,S1X ECAD Model


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TK17E65W,S1X Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK17E65W,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK17E65W,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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13,170 In Stock


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Unit Price: $3.8158
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.5487 $3.5487
10+ $3.5105 $35.1054
100+ $3.3197 $331.9746
1000+ $3.1290 $1,564.4780
10000+ $2.8619 $2,861.8500
The price is for reference only, please refer to the actual quotation!

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