TK12E80W,S1X
TK12E80W,S1X
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Toshiba Semiconductor and Storage

TK12E80W,S1X


TK12E80W,S1X
F10256-TK12E80W,S1X
Active
MOSFET N-CH 800V 11.5A TO220
TO-220-3

TK12E80W,S1X ECAD Model


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TK12E80W,S1X Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 300 V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK12E80W,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK12E80W,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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10,990 In Stock


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Unit Price: $4.295
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.9944 $3.9944
10+ $3.9514 $39.5140
100+ $3.7367 $373.6650
1000+ $3.5219 $1,760.9500
10000+ $3.2213 $3,221.2500
The price is for reference only, please refer to the actual quotation!

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