TK110E65Z,S1X
TK110E65Z,S1X
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Toshiba Semiconductor and Storage

TK110E65Z,S1X


TK110E65Z,S1X
F10256-TK110E65Z,S1X
Active
650V DTMOS VI TO-220 110MOHM
TO-220-3

TK110E65Z,S1X ECAD Model


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TK110E65Z,S1X Attributes


Type Description Select
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK110E65Z,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK110E65Z,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

3,360 In Stock


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Unit Price: $5.1282
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.7692 $4.7692
10+ $4.7179 $47.1794
100+ $4.4615 $446.1534
1000+ $4.2051 $2,102.5620
10000+ $3.8462 $3,846.1500
The price is for reference only, please refer to the actual quotation!

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