TK10P60W,RVQ
TK10P60W,RVQ
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Toshiba Semiconductor and Storage

TK10P60W,RVQ


TK10P60W,RVQ
F10256-TK10P60W,RVQ
Active
MOSFET N CH 600V 9.7A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63

TK10P60W,RVQ ECAD Model


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TK10P60W,RVQ Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

TK10P60W,RVQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK10P60W,RVQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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49,780 In Stock


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Unit Price: $3.3536
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.1188 $3.1188
10+ $3.0853 $30.8531
100+ $2.9176 $291.7632
1000+ $2.7500 $1,374.9760
10000+ $2.5152 $2,515.2000
The price is for reference only, please refer to the actual quotation!

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