TK100E08N1,S1X
TK100E08N1,S1X
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Toshiba Semiconductor and Storage

TK100E08N1,S1X


TK100E08N1,S1X
F10256-TK100E08N1,S1X
Active
MOSFET N-CH 80V 100A TO220
TO-220-3

TK100E08N1,S1X ECAD Model


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TK100E08N1,S1X Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 40 V
FET Feature -
Power Dissipation (Max) 255W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

TK100E08N1,S1X Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK100E08N1,S1X. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

4,790 In Stock


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Unit Price: $4.7323
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.4010 $4.4010
10+ $4.3537 $43.5372
100+ $4.1171 $411.7101
1000+ $3.8805 $1,940.2430
10000+ $3.5492 $3,549.2250
The price is for reference only, please refer to the actual quotation!

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