
Toshiba Semiconductor and Storage
SSM6N62TU,LXHF
SSM6N62TU,LXHF ECAD Model
SSM6N62TU,LXHF Attributes
Type | Description | Select |
---|---|---|
Series | - | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate, 1.2V Drive | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) | |
Rds On (Max) @ Id, Vgs | 85mOhm @ 800mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V | |
Input Capacitance (Ciss) (Max) @ Vds | 177pF @ 10V | |
Power - Max | 500mW (Ta) | |
Operating Temperature | 150°C | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Surface Mount | |
Package / Case | 6-SMD, Flat Leads | |
Supplier Device Package | UF6 |
SSM6N62TU,LXHF Overview
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