SSM6N35FE,LM
SSM6N35FE,LM
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
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Toshiba Semiconductor and Storage

SSM6N35FE,LM


SSM6N35FE,LM
F10256-SSM6N35FE,LM
Active
MOSFET 2N-CH 20V 0.18A ES6
SOT-563, SOT-666

SSM6N35FE,LM ECAD Model


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SSM6N35FE,LM Attributes


Type Description Select
Series -
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 180mA
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6

SSM6N35FE,LM Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the SSM6N35FE,LM. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

25,810 In Stock


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Unit Price: $0.1198
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.1114 $0.1114
10+ $0.1102 $1.1022
100+ $0.1042 $10.4226
1000+ $0.0982 $49.1180
10000+ $0.0899 $89.8500
The price is for reference only, please refer to the actual quotation!

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