
Toshiba Semiconductor and Storage
SSM5H08TU,LF
SSM5H08TU,LF ECAD Model
SSM5H08TU,LF Attributes
Type | Description | Select |
---|---|---|
Series | U-MOSIII | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 750mA, 4V | |
Vgs(th) (Max) @ Id | 1.1V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 10 V | |
FET Feature | Schottky Diode (Isolated) | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | UFV | |
Package / Case | 6-SMD (5 Leads), Flat Lead |
SSM5H08TU,LF Overview
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