
Toshiba Semiconductor and Storage
SSM3K62TU,LXHF
SSM3K62TU,LXHF ECAD Model
SSM3K62TU,LXHF Attributes
Type | Description | Select |
---|---|---|
Series | U-MOSVII-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
Rds On (Max) @ Id, Vgs | 57mOhm @ 800mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 177 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | 150°C | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Surface Mount | |
Supplier Device Package | UFM | |
Package / Case | 3-SMD, Flat Lead |
SSM3K62TU,LXHF Overview
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