2SJ168TE85LF
2SJ168TE85LF
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Toshiba Semiconductor and Storage

2SJ168TE85LF


2SJ168TE85LF
F10256-2SJ168TE85LF
Active
MOSFET P-CH 60V 200MA SC59
TO-236-3, SC-59, SOT-23-3

2SJ168TE85LF ECAD Model


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2SJ168TE85LF Attributes


Type Description Select
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 85 pF @ 10 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SC-59
Package / Case TO-236-3, SC-59, SOT-23-3

2SJ168TE85LF Overview


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18,640 In Stock


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Unit Price: $0.6229
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.5793 $0.5793
10+ $0.5731 $5.7307
100+ $0.5419 $54.1923
1000+ $0.5108 $255.3890
10000+ $0.4672 $467.1750
The price is for reference only, please refer to the actual quotation!

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