CSD19538Q2T
CSD19538Q2T
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Texas Instruments

CSD19538Q2T


CSD19538Q2T
F2441-CSD19538Q2T
Active
MOSFET N-CH 100V 13.1A 6WSON
6-WDFN Exposed Pad

CSD19538Q2T ECAD Model


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CSD19538Q2T Attributes


Type Description Select
Series NexFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad

CSD19538Q2T Overview


Texas Instruments offers a wide range of electronic components for various applications, and one such component is the CSD19538Q2T. This component can be purchased from FMALL, a reputable supplier of electronic components.

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5,600 In Stock


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Unit Price: $1.6129
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.5000 $1.5000
10+ $1.4839 $14.8387
100+ $1.4032 $140.3223
1000+ $1.3226 $661.2890
10000+ $1.2097 $1,209.6750
The price is for reference only, please refer to the actual quotation!

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