SCTWA90N65G2V-4
SCTWA90N65G2V-4
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STMicroelectronics

SCTWA90N65G2V-4


SCTWA90N65G2V-4
F2455-SCTWA90N65G2V-4
Active
TRANS SJT N-CH 650V 119A HIP247
TO-247-3

SCTWA90N65G2V-4 ECAD Model


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SCTWA90N65G2V-4 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 119A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V
FET Feature -
Power Dissipation (Max) 565W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package HiP247™ Long Leads
Package / Case TO-247-3

SCTWA90N65G2V-4 Overview


STMicroelectronics offers a wide range of electronic components for various applications, and one such component is the SCTWA90N65G2V-4. This component can be purchased from FMALL, a reputable supplier of electronic components.

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42,570 In Stock


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Unit Price: $39.4645
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $36.7020 $36.7020
10+ $36.3073 $363.0734
100+ $34.3341 $3,433.4115
1000+ $32.3609 $16,180.4450
10000+ $29.5984 $29,598.3750
The price is for reference only, please refer to the actual quotation!

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