SCTWA90N65G2V
SCTWA90N65G2V
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STMicroelectronics

SCTWA90N65G2V


SCTWA90N65G2V
F2455-SCTWA90N65G2V
Active
SILICON CARBIDE POWER MOSFET 650
TO-247-3

SCTWA90N65G2V ECAD Model


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SCTWA90N65G2V Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 119A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V
FET Feature -
Power Dissipation (Max) 565W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3

SCTWA90N65G2V Overview


STMicroelectronics offers a wide range of electronic components for various applications, and one such component is the SCTWA90N65G2V. This component can be purchased from FMALL, a reputable supplier of electronic components.

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36,870 In Stock


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Unit Price: $51.298
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $47.7071 $47.7071
10+ $47.1942 $471.9416
100+ $44.6293 $4,462.9260
1000+ $42.0644 $21,032.1800
10000+ $38.4735 $38,473.5000
The price is for reference only, please refer to the actual quotation!

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