SCTWA60N120G2-4
SCTWA60N120G2-4
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STMicroelectronics

SCTWA60N120G2-4


SCTWA60N120G2-4
F2455-SCTWA60N120G2-4
Active
SILICON CARBIDE POWER MOSFET 120
TO-247-4

SCTWA60N120G2-4 ECAD Model


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SCTWA60N120G2-4 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
FET Feature -
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4

SCTWA60N120G2-4 Overview


STMicroelectronics offers a wide range of electronic components for various applications, and one such component is the SCTWA60N120G2-4. This component can be purchased from FMALL, a reputable supplier of electronic components.

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49,950 In Stock


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Unit Price: $39.6797
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $36.9021 $36.9021
10+ $36.5053 $365.0532
100+ $34.5213 $3,452.1339
1000+ $32.5374 $16,268.6770
10000+ $29.7598 $29,759.7750
The price is for reference only, please refer to the actual quotation!

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