HXY MOSFET
SIR424DP-T1-GE3-HXY
SIR424DP-T1-GE3-HXY ECAD Model
SIR424DP-T1-GE3-HXY Attributes
| Type | Description | Select |
|---|---|---|
| Drain Source Voltage (Vdss) | 20V | |
| Configuration | - | |
| Continuous Drain Current (Id) | 80A | |
| Power Dissipation (Pd) | 58W | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.5mΩ@4.5V,30A | |
| Gate Threshold Voltage (Vgs(th)@Id) | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 386pF@10V | |
| Type | 1 N-Channel | |
| Input Capacitance (Ciss@Vds) | 2.5nF@10V | |
| Total Gate Charge (Qg@Vgs) | 32nC@4.5V |
SIR424DP-T1-GE3-HXY Overview
HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the SIR424DP-T1-GE3-HXY. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the SIR424DP-T1-GE3-HXY provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the SIR424DP-T1-GE3-HXY to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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21,090 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $0.4326 | $0.4326 |
| 10+ | $0.4280 | $4.2798 |
| 100+ | $0.4047 | $40.4724 |
| 1000+ | $0.3815 | $190.7320 |
| 10000+ | $0.3489 | $348.9000 |
| The price is for reference only, please refer to the actual quotation! | ||