HXY MOSFET
SI2309-HXY
SI2309-HXY ECAD Model
SI2309-HXY Attributes
| Type | Description | Select |
|---|---|---|
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 2A | |
| Power Dissipation (Pd) | 1.5W | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 160mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.6V@250uA | |
| Type | 1 Piece P-Channel | |
| Input Capacitance (Ciss@Vds) | 444.2pF |
SI2309-HXY Overview
HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the SI2309-HXY. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the SI2309-HXY provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the SI2309-HXY to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
