
HXY MOSFET
Si2306BDS-T1-GE3-HXY
Si2306BDS-T1-GE3-HXY ECAD Model
Si2306BDS-T1-GE3-HXY Attributes
Type | Description | Select |
---|---|---|
Drain Source Voltage (Vdss) | - | |
Continuous Drain Current (Id) | - | |
Drain Source On Resistance (RDS(on)@Vgs,Id) | - | |
Type | 1 N-Channel |
Si2306BDS-T1-GE3-HXY Overview
HXY MOSFET offers a wide range of electronic components for various applications, and one such component is the Si2306BDS-T1-GE3-HXY. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the Si2306BDS-T1-GE3-HXY provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the Si2306BDS-T1-GE3-HXY to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
HXY MOSFET is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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20,860 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $0.0473 | $0.0473 |
10+ | $0.0468 | $0.4683 |
100+ | $0.0443 | $4.4283 |
1000+ | $0.0417 | $20.8690 |
10000+ | $0.0382 | $38.1750 |
The price is for reference only, please refer to the actual quotation! |