HARRIS
RF1S640SM
RF1S640SM ECAD Model
RF1S640SM Attributes
| Type | Description | Select |
|---|---|---|
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 180mΩ@10A,10V | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Type | 1 N-Channel | |
| Input Capacitance (Ciss@Vds) | 1.275nF@25V | |
| Total Gate Charge (Qg@Vgs) | 64nC@10V | |
| Operating Temperature | -55℃~+150℃@(Tj) |
RF1S640SM Overview
HARRIS offers a wide range of electronic components for various applications, and one such component is the RF1S640SM. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the RF1S640SM provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the RF1S640SM to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
HARRIS is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
