onsemi
SSW4N60BTM
SSW4N60BTM ECAD Model
SSW4N60BTM Attributes
| Type | Description | Select |
|---|---|---|
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5Ω@2A,10V | |
| Power Dissipation (Pd) | 3.13W;100W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Type | 1 N-Channel | |
| Input Capacitance (Ciss@Vds) | 920pF@25V | |
| Total Gate Charge (Qg@Vgs) | 29nC@10V | |
| Operating Temperature | -55℃~+150℃@(Tj) |
SSW4N60BTM Overview
onsemi offers a wide range of electronic components for various applications, and one such component is the SSW4N60BTM. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the SSW4N60BTM provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the SSW4N60BTM to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
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