NVDSH20120C
NVDSH20120C
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NVDSH20120C


NVDSH20120C
F2454-NVDSH20120C
Active
DIODE SIL CARB 1.2KV 26A TO247-2
TO-247-2

NVDSH20120C ECAD Model


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NVDSH20120C Attributes


Type Description Select
Series -
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 26A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Capacitance @ Vr, F 1480pF @ 1V, 100kHz
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C

NVDSH20120C Overview


onsemi offers a wide range of electronic components for various applications, and one such component is the NVDSH20120C. This component can be purchased from FMALL, a reputable supplier of electronic components.

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29,580 In Stock


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Unit Price: $10.368
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Pricing (USD)

QTY Unit Price Ext Price
1+ $9.6422 $9.6422
10+ $9.5386 $95.3856
100+ $9.0202 $902.0160
1000+ $8.5018 $4,250.8800
10000+ $7.7760 $7,776.0000
The price is for reference only, please refer to the actual quotation!

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