NVBG080N120SC1
NVBG080N120SC1
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NVBG080N120SC1


NVBG080N120SC1
F2454-NVBG080N120SC1
Active
SICFET N-CH 1200V 30A D2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

NVBG080N120SC1 ECAD Model


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NVBG080N120SC1 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

NVBG080N120SC1 Overview


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26,090 In Stock


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Unit Price: $17.6311
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $16.3969 $16.3969
10+ $16.2206 $162.2061
100+ $15.3391 $1,533.9057
1000+ $14.4575 $7,228.7510
10000+ $13.2233 $13,223.3250
The price is for reference only, please refer to the actual quotation!

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