NTD4809N-1G
NTD4809N-1G
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NTD4809N-1G


NTD4809N-1G
F2454-NTD4809N-1G
Active
MOSFET N-CH 30V 9.6A/58A IPAK
TO-251-3 Short Leads, IPak, TO-251AA

NTD4809N-1G ECAD Model


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NTD4809N-1G Attributes


Type Description Select
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.4W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

NTD4809N-1G Overview


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35,400 In Stock


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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.0744 $0.0744
10+ $0.0736 $0.7360
100+ $0.0696 $6.9600
1000+ $0.0656 $32.8000
10000+ $0.0600 $60.0000
The price is for reference only, please refer to the actual quotation!

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