onsemi
MJD31CEITU
MJD31CEITU ECAD Model
MJD31CEITU Attributes
| Type | Description | Select |
|---|---|---|
| Collector Cut-Off Current (Icbo) | 50uA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 100V | |
| Power Dissipation (Pd) | 1.56W | |
| DC Current Gain (hFE@Ic,Vce) | 60@100mA,1V | |
| Collector Current (Ic) | 3A | |
| Transition Frequency (fT) | 3MHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.2V@3A,375mA | |
| Transistor Type | NPN | |
| Operating Temperature | - |
MJD31CEITU Overview
onsemi offers a wide range of electronic components for various applications, and one such component is the MJD31CEITU. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the MJD31CEITU provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the MJD31CEITU to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
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